(#JR-2500631) Technology Development Integration Engineer, RF GaN (2025 New College Graduate)

About GlobalFoundries  

GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.  

New College Graduates Overview:    

We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.   

Summary of Role:  

We are seeking highly motivated employees with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9).   New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows and devices in RF GaN technologies, targeting new market applications. 

Essential Responsibilities: 

This position offers the unique opportunity to develop innovative RF GaN technologies as a Process Integration Engineer and deliver performance and reliability demonstration across technology development qualification milestones from conception through manufacturing installation 

Initial and primary responsibilities include development of integrated process flows and devices structures that meet performance, reliability, yield, and cost objectives for our customers. 

Collaborate with various engineering teams outside of the technology development team, such as testing, failure analysis, unit module process, reliability, manufacturing, modeling and TCAD simulation, to facilitate and achieve program success.  
 

Other Responsibilities:

Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. 

Required Qualifications:

Requires a technical (University) degree in the field of Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science or related field from an accredited degree program. (Exceptions approved by local HR). 
BS + 2-4 years of experience or 
MS + 1-3 year of experience 
PhD + 0-1 year of experience 

Knowledge of GaN HEMT and modern semiconductor device physics and device characterization (DC, s-parameter, load pull, pulsed I-V) 

Experience in semiconductor processing with emphasis on wide band gap materials like the III-N material system 

Must have at least an overall 3.0 GPA and proven good academic standing. 

Language Fluency - English (Written & Verbal) 

Physical Capacity Demands – some amount of time required to work in a manufacturing clean room, with product handling.   

Proficiency in MS Office and Statistical Analysis including Cpk, Design of Experiments 
 

Preferred Qualifications:

Master’s or PhD in Electrical Engineering, Materials Science, Solid State Physics or other relevant Electrical engineering, engineering or physical science discipline.  

Prior related internship or co-op experience. 

Demonstrated prior leadership experience in the workplace, school projects, competitions, etc. 

Project management skills, i.e. the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity. 

Strong written and verbal communication skills 

Strong planning & organizational skills 

Research experience in GaN e-mode or d-mode HEMT RF High Frequency or Power High Voltage devices, or Wide Bandgap Device (WBG) devices. 

Fundamental understanding of WBG device physics like dispersion, traps, self-heating, buffer design 

Experience in semiconductor processing in GaN-on-Silicon technologies. 

Experience characterizing GaN-on-Si or Wide Bandgap devices  

Excellent interpersonal skills, energetic, motivated, and self-driven   

Demonstrate ability to work well within a global matrixed team or environment with minimal supervision  

Expected Salary Range

$65,400.00 - $145,800.00

The exact Salary will be determined based on qualifications, experience and location.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. 

An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. 

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. 

All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law