(#6309294003) Intern, DRAM Device Engineer
What You’ll Learn
- Project Overview: TCAD simulation of DRAM cell device characteristics
- Skills You’ll Learn:
- DRAM cell device design & optimization
- Industry R&D perspectives for memory devices
- TCAD simulation including variability assessment
What You’ll Do
Join the Samsung Semiconductor DRAM Path Finding Team! As an intern, you will explore device optimization by TCAD simulation for a DRAM cell transistor. Dive into technology requirements, design rule, structural and electrical specifications while engaging in technical interactions with internal customers.
Location: Onsite at our San Jose headquarters 5 days a week.
Reports to: Senior Principal Engineer, DRAM Path Finding Team
- Survey literature on DRAM device technology and simulation
- Find technical barriers for future DRAM and propose vectors to explore with team members
- Assess DRAM cell device feasibility by TCAD simulation
- Collaborate with team members for future DRAM design
- Complete other responsibilities as assigned
What You Bring
- Graduate student pursuing PhD program in Electrical engineering or Physics or Material engineering
- Must have at least 1 academic quarter/semester remaining
- Good knowledge of semiconductor / memory device physics / some familiarity with TCAD simulation
- Good knowledge of VLSI circuits and systems
- You’re inclusive, adapting your style to the situation and diverse global norms of our people.
- An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding.
- You’re collaborative, building relationships, humbly offering support and openly welcoming approaches.
- Innovative and creative, you proactively explore new ideas and adapt quickly to change.