Postdoctoral Researcher - Silicon Crystal Growth
This Postdoctoral Researcher position is within the High Efficiency Crystalline Photovoltaics group within the Materials Science Center at NLR. The group is made up of two teams that work on Silicon and III-V materials, the latter by hydride vapor phase epitaxy.
The position focuses on developing a new way to grow silicon boules using a combined float-zone technique with chemical vapor deposition. The Postdoctoral Researcher will contribute to the designing and building of a new deposition system based on CFD modeling and use the system to grow single crystal boules of silicon from a silane gas source. This position will perform extensive characterization and analysis of the resulting materials.
Primary duties involve the development of a new silicon boule float-zone system that incorporates silane chemical vapor deposition. The work will involve designing, building, and testing the crystal growth system involving vacuum hardware and chemical vapor deposition of silane gas. Duties also include characterization of the grown material for chemical purity and crystalline defects. The Postdoctoral Researcher will be expected to present data on the project at biweekly team meetings and to project sponsors. Journal publications are expected from this work.
This position is expected to work closely with a computational fluid dynamic modeling team to optimize the design of the system as well as to work closely with a technoeconomic and lifecycle team to provide needed input to their models.
NLR has a strong safety culture and the candidate is expected to adhere to and promote this culture. In addition, teamwork and collaboration define the modern scientific approach, and the Postdoctoral Researcher will be expected to collaborate, be open to new ideas, and recognize the contribution of others. The Postdoctoral Researcher will be expected to support a work environment that maximizes the unique talents and innovative ideas of every employee.
Basic Qualifications
Must be a recent PhD graduate within the last three years.
* Must meet educational requirements prior to employment start date.
Additional Required Qualifications
- Ph.D. in Physics, Chemistry, Materials Science, Chemical or Electrical Engineering, or a related field.
- Experience in the growth, characterization, and/or processing of materials, and/or experience with bulk crystal growth, epitaxial growth, or growth of polycrystalline/amorphous thin films.
- Additional skills in metal machining, CAD drawing, system and parts design, and vacuum build and operation experience are valued.
- Qualified candidates must demonstrate skill in interpreting and assessing the experimental results of their own work and that of others and demonstrate a record of success from graduate and/or post-graduate work in this area.
- Good interpersonal, oral and written communication skills are essential for success in this role.
- A self-starting attitude and initiative are highly valued.
Preferred Qualifications
- Demonstrated skills and experience in the growth, characterization, and/or processing of silicon materials.
- Experience in mechanical design and building of vacuum chambers. Experience in silicon growth using silane gas.
- Familiarity with computational fluid dynamic, thermodynamic, or kinetic modeling.
- Strong publication record.